Analog Electronics - 1 - Dec 2013
Electronics & Telecomm. (Semester 3)
TOTAL MARKS: 80
TOTAL TIME: 3 HOURS (1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Assume data if required.
(4) Figures to the right indicate full marks.
Solve any five:-
1 (a) Draw switching characteristics of a diode and explain reverse recovery time(4 marks) 1 (b) Draw energy bond diagram of MOS capacitor in accumulation, depletion and inversion region for P-substrate(4 marks) 1 (c) Draw the dc load line for above circuit. (4 marks) 1 (d) Compare CE, CB and CC configuration(4 marks) 1 (e) Obtain gm, ro and Av for the amplifier circuit shown in figure. In which region the device is operating? Justify. (4 marks) 1 (f) State and explain Barkhausen's Criteria for oscillation(4 marks) 2 (a) Obtain IDQ, VDSQ, VGSQ graphically (8 marks) 2 (b) Derive the expression for frequency of oscillation for a transistorized (BJT) RC phase shift oscillator(8 marks) 2 (c) Obtain output for the clipper circuit shown in fig. If a sine wave of 15 sinwt is applied as an input. Assume practicle diode with suitable cut in voltage. (4 marks) 3 (a) VTN=1V, Kn=05 mA/V2. ?=0.01 V-1 Determine VGSQ and VDSQ Also calculate voltage gain, input and output resistance. (10 marks) 3 (b) Determine Ri, Ro, Av and gm for amplifier circuit shown in figure VBE(ON)=0.7V, β=100, VA=∞ (10 marks) 4 (a) Derive the expression for Threshold Voltage for Enhancement type N-channel MOSFET(10 marks) 4 (b) Determine IB, ICE, VE and VB and also SICO for the biasing circuit shown in figure (10 marks) 5 (a) Explain graphical method to obtain to parameter of CE configuration(10 marks) 5 (b) Calculate IDQ, VGSQ and VDSQ (5 marks) 5 (c) Determine hybrid-? parameters (5 marks)
Write short note (any four) :-
6 (a) Small signal model of a diode(5 marks) 6 (b) Hybrid pi model of BJT(5 marks) 6 (c) Regions of operation of FET (5 marks) 6 (d) Crystal oscilator(5 marks) 6 (e) Construction and operation of schottkey diode(5 marks)