Question Paper: Digital Electronics : Question Paper Dec 2016 - Electronics & Telecomm (Semester 3) | Pune University (PU)

Digital Electronics - Dec 2016

Electronics & Telecom Engineering (Semester 3)

(1) Question 1 is compulsory.
(2) Attempt any four from the remaining questions.
(3) Assume data wherever required.
(4) Figures to the right indicate full marks.
1(a) Compare TTL, CMOS and ECL.(6 marks)

Solve any one question.Q1(a,b,c) Q2(a,b)

1(a) Design of one bit magnitude comparator.(4 marks) 1(b) Obtain an 8:1 multiplexer with a dual 4 line to 1-line multiplexers having separate enable inputs but common selections lines.(3 marks) 1(b) Convert SR flip-flop to Toggle flip-flop (SR to TFF)(4 marks) 1(c) Explain the working of CMOS Inverter.(3 marks) 1(c) Compare the multiplexer and de-multiplexer.(4 marks) 2( b) What do you mean by tristate logic? Explain in detail one applicaion of such logic circuit.(3 marks) 2(a) Design 2-bit comparator using decoder.(6 marks) 2(a) Implement the following expression using single 8:1 multiplexer:
Y= ∑m (0,
(6 marks)
2(b) What are advantages of master-slave JK flip-flop? Explain the working with a suitable diagram.(6 marks) 2(c) Explain the concept of look ahead carry generator and advantage of the same.(3 marks) 3(a) Explain the following terms:
i) State Table
ii) State Diagram
iii) State Reduction.
(6 marks)

Solve any one question.Q3(a,b) Q4(a,b)

3(a) Design a sequence generator for the sequence ...10110....(6 marks) 3(b) Design 4-Bit Excess-3 to BCD Code Converter and implement using Logic Gates.(6 marks) 3(b) Compare TTL and CMOS logic family with reference to the following characteristics:
i) fanout
ii) propagation delay
iii) Power dissipation
iv) noise margin
v) speed power product
vi) voltage and current parameters.
(6 marks)
4(a) Write a short note on ALU.(5 marks) 4(a) Explain the terms related to ASM chart:
i) state box
ii) decision box
iii) conditional box
(6 marks)
4(b) By using suitable FFS design A counter to go through states 0-1-3-4-6-0. Draw the logic diagram. Examine the action of counter for the Unused States.(7 marks) 4(b) Draw aand explain working of two input TTL NAND gate and list advantages of totem pole output stage.(6 marks) 5(a) Give comparison between PROM, PLA and PAL.(5 marks)

Solve any one question.Q5(a,b,c) Q6(a,b,c)

5(a) A combinational circuit is defined by functions:
F2 = ∑m (4,
7) Design the circuit using PLA having 3 inputs, 3product terms and 2 outputs.
(6 marks)
5(b) A combination circuit is defined by the function :F1(A, B,C)=∑m(2, 3,7)
F2(A, B, C)=∑m(3, 4,6) Implement the Circuit using PLA.
(8 marks)
5(b) Draw circuits of one cell of dynamic RAM and explain its working.(4 marks) 5(c) Compare SRAM and DRAM.(3 marks) 6(a) Compare between CPLD and FPGA.(6 marks) 6(a) Draw and explain the internal organization of asynchronous SRAM.(6 marks) 6(b) Design a BCD to gray code converter and implement using PLA.(7 marks) 6(b) Explain PLA with the help of neat diagram.(4 marks) 6(c) Compare CPLD and FPGA.(3 marks) 7(a) Write a VHDL code for 4-Bit Binary to gray code converter using CASE statement.(8 marks)

Solve any one question.Q7(a,b,c) Q8(a,b,c)

7(a) Draw and explain architecture of 8051 in detail.(6 marks) 7(b) What is the difference between Concurrent and Sequential statement in VHDL? Explain with proper example.(5 marks) 7(b) Compare the microprocessor and microcontroller.(4 marks) 7(c) Write a program for addition of 8-bit binary numbers.(3 marks) 8(a) Write a VHDL code for a 2-Bit Comparator using Data flow Modelling Technique.(7 marks) 8(a) Explain any three addressing modes of 8051 with example.(6 marks) 8(b) Explain different classes of data Objects in VHDL with example for each.(6 marks) 8(b) Draw and explain PSW register of 8051.(4 marks) 8(c) List out feature of 8051 (minimum six).(3 marks)

written 18 months ago by gravatar for Team Ques10 Team Ques10 ♦♦ 400
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