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Compare Depletion and Enhancement type MOSFET
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written 6.1 years ago by
teamques10
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| Sr.No | D-MOSFET | E-MOSFET |
|---|---|---|
| 1 | An insulating oxide layer (Sio2) is present between gate and channel | The insulating oxide layer is present between gate and substrate |
| 2 | N or p type channel is present | Channel is not present. At the time of operation, an induced channel gets created. |
| 3 | For an n-channel D-MOSFET the Vgs is negative for depletion mode and positive for enhancement mode. | For an n-channel E-MOSFET,Vgs will be only positive. |
| 4 | For an n-channel D-MOSFET,Id decreases as Vgs becomes more and more negative | For an n-channel E-MOSFET,Id increases as Vgs becomes more and more positive |
| 5 | For an n-channel D-MOSFET,Id=0 for Vgs ≥ Vp | For an n-channel E-MOSFET,Id=0 for Vgs ≤ Vt |
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