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Question: State the properties of thermally grown $SiO_2$.
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Subject: Electronics Engineering

Topic: IC Technology

Difficulty: Medium / High

ic technology • 8 views
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modified 4 days ago  • written 4 days ago by gravatar for Sayali Bagwe Sayali Bagwe1.7k
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  • Melting point – $1700^0 C$
  • Dielectric strength – $10^7$ V/cm
  • Relative dielectric constant – 3.9
  • Thermal expansion coefficient $– 5.6 x 10^{-7} / K$
  • Molecules / $cm^3 – 2.3 x 10^{22}cm^3$
  • Energy gap = 8 eV
  • DC Resistivity $≅ 10^{17}$ ohm-cm
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written 4 days ago by gravatar for Sayali Bagwe Sayali Bagwe1.7k
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