Question: State the properties of thermally grown $SiO_2$.
0

Subject: Electronics Engineering

Topic: IC Technology

Difficulty: Medium / High

ic technology • 47 views
ADD COMMENTlink
modified 8 weeks ago  • written 8 weeks ago by gravatar for Sayali Bagwe Sayali Bagwe1.9k
0
  • Melting point – $1700^0 C$
  • Dielectric strength – $10^7$ V/cm
  • Relative dielectric constant – 3.9
  • Thermal expansion coefficient $– 5.6 x 10^{-7} / K$
  • Molecules / $cm^3 – 2.3 x 10^{22}cm^3$
  • Energy gap = 8 eV
  • DC Resistivity $≅ 10^{17}$ ohm-cm
ADD COMMENTlink
written 8 weeks ago by gravatar for Sayali Bagwe Sayali Bagwe1.9k
Please log in to add an answer.