PDSOI:

PDSOI or Partially Depleted SOI MOSFETs are the successors of earlier SOS (Silicon – on - Sapphire) devices.

Body is partially depleted and ‘floats’ independent from bulk substrate.

Floating body boosts the performance but introduces some peculiarities.

Low voltage performance of PDSOI can be improved by creating a contact improves the sub-threshold slope, body factor and current drive, but limits the device operation to sub-1V supply voltages.

FDSOI:

Fully Depleted SOI devices have a better electrostatic coupling between the gate and the channel. This results in better linearity, sub-threshold slope, body coefficient and current drive. FDSOI technology is used in a number of applications ranging from low voltage, low-power to RF integrated circuits.