written 5.5 years ago by
yashbeer
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Electronics Engineering (Semester 7)
Total marks: 80
Total time: 3 Hours
INSTRUCTIONS
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.
Q1) Answer any four of the following:
1(a)
What are the pros and cons of ion implantation and diffusion?
(5 marks)
2509
2804
1(b)
Explain the difference between Dry Etching and Wet Etching.
(5 marks)
2810
1(d)
Explain the difference between SOI Finfet and bulk Finfet.
(5 marks)
2866
1(e)
Describe the SIMOX method of fabrication of SOI.
(5 marks)
2851
2(a)
Explain method for silicon crystal growth. What are its advantages?
(10 marks)
2243
2244
2245
2(b)
Explain interstitial and substitutional diffusion process with example.
(10 marks)
2511
3(a)
Explain the difference between positive photo resist and negative
photo resist.
(5 marks)
2815
3(b)
Difference between Schottky contacts and Ohmic contacts.
(5 marks)
2824
3(c)
What is the significance of design rules? Draw layout for 2 input CMOS
NOR gate using lambda() based design rules.
(10 marks)
2831
4(a)
What is LOCOS? Why it is required for CMOS process. Explain
technology solutions to avoid the problems in locus.
(10 marks)
2822
4(b)
Develop the equation to describe the oxidation process
(Deal-Grove model).
(10 marks)
2505
5(a)
Explain the fabrication process steps along with vertical cross-sectional
view of CMOS inverter using N-well process.
(10 marks)
2827
5(b)
With the help of neat diagram describe Hayness-schokly experiment for
measurement of Drift mobility of n-type semiconductor.
(5 marks)
2839
Q6) Write short notes on any four of the following:
6(a)
The steps in standard RCA cycle during water cleaning.
(5 marks)
2237
6(b)
Fabrication of MESFET
(5 marks)
2858
6(d)
Multigate device structure
(5 marks)
2868
6(e)
Types of Thin film deposition
(5 marks)
2247