Question Paper: IC Technology Question Paper - Dec 17 - Electronics Engineering (Semester 7) - Mumbai University (MU)
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IC Technology - Dec 17

Electronics Engineering (Semester 7)

Total marks: 80
Total time: 3 Hours
INSTRUCTIONS
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.

Q1) Answer any four of the following:

1(a) What are the pros and cons of ion implantation and diffusion?
(5 marks) 2509 2804

1(b) Explain the difference between Dry Etching and Wet Etching.
(5 marks) 2810

1(c) Explain High K and Low K dielectrics with application of each.
(5 marks) 2508

1(d) Explain the difference between SOI Finfet and bulk Finfet.
(5 marks) 2866

1(e) Describe the SIMOX method of fabrication of SOI.
(5 marks) 2851

2(a) Explain method for silicon crystal growth. What are its advantages?
(10 marks) 2243 2244 2245

2(b) Explain interstitial and substitutional diffusion process with example.
(10 marks) 2511

3(a) Explain the difference between positive photo resist and negative photo resist.
(5 marks) 2815

3(b) Difference between Schottky contacts and Ohmic contacts.
(5 marks) 2824

3(c) What is the significance of design rules? Draw layout for 2 input CMOS NOR gate using lambda() based design rules.
(10 marks) 2831

4(a) What is LOCUS? Why it is required for CMOS process. Explain technology solutions to avoid the problems in locus.
(10 marks) 2822

4(b) Develop the equation to describe the oxidation process (Deal-Grove model).
(10 marks) 2505

5(a) Explain the fabrication process steps along with vertical cross-sectional view of CMOS inverter using N-well process.
(10 marks) 2827

5(b) With the help of neat diagram describe Hayness-schokly experiment for measurement of Drift mobility of n-type semiconductor.
(5 marks) 2839

5(c) Write on: Functions and powers of Central pollution control board.
(10 marks) 00

Q6) Write short notes on any four of the following:

6(a) The steps in standard RCA cycle during water cleaning.
(5 marks) 2237

6(b) Fabrication of MESFET
(5 marks) 2858

6(c) Electronic packets reliability
(5 marks) 2842

6(d) Multigate device structure
(5 marks) 2868

6(e) Types of Thin film deposition
(5 marks) 2247

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modified 6 weeks ago by gravatar for Sanket Shingote Sanket Shingote ♦♦ 250 written 7 weeks ago by gravatar for Yashbeer Yashbeer ♦♦ 130
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