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Electronic Devices and Circuits 2 Question Paper - May 18 - Electronics And Telecomm (Semester 4) - Mumbai University (MU)
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Electronic Devices and Circuits 2 - May 18
Electronics And Telecomm (Semester 4)
Total marks: 80
Total time: 3 Hours
INSTRUCTIONS
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.
Q1 Attempt any four of the following:
a)
Draw a neat laballed diagram of Deplition type Mosefet and explain its operation.
(5 marks)
00
b)
Find the value of $I_E$ and $V_CE$ for the give Darlington configuration:
(5 marks)
00
Given $\beta_1$ = 80,$\beta_2$ = 100, $V_CE$ = 1.6V
c)
Differentiate small signal Amplifier and large signal Amplifier.
(5 marks)
00
d)
State Barkhausen's criteria and explain basic principle of an Oscillator.
(5 marks)
00
e)
Give the advantages of negative feedback.
(5 marks)
00
Q2
a)
Design a two stage RC coupled CS Amplifier to meet following specifications : $A_v$ > 100; $V_o$ = 4V; $I_{DQ}$ = 1.2 mA; $f_L$= 20 Hz.
(15 marks)
00
Assume $g_{mo}$ = 5 m$\Omega$, $I_{DSS}$ = 7mA, $r_d$ = 50k$\Omega$, $V_P$ = -4V. Assume suitable $V_{DD}$.
b)
Compare RC coupled, Direct coupled and transformed coupled amplifiers.
(5 marks)
00
Q3
a)
Determine input impedence, output impedence, voltage gain and current gain for the given cascaded BJT amplifier as shown in the figure below:
(10 marks)
00
Given: $h_{fe}$ = 200 and $h_{ie}$ = 1.3$\Omega$.
b)
Find the necessary condition for oscillations to occur and frequency of oscillations of Hartley Oscillator. Also, explain its working.
(10 marks)
00
Q4
a)
With the help of neat block diagram, derive expression for $R_{IF}$, $R_{OF}$, $G_{mF}$ for current series negative feedback amplifier. Give significance of the above mentioned parameters.
(8 marks)
00
b)
For the circuit shown below, determine the following:
(12 marks)
00
- $R_s$
- Q-point of each stage
- AC equivalent model
- Lower cut-off frequency($f_L$)
Given: $V_{GS}$ = -1V, $I_{DSS}$ = 8mA, $V_P$ = -4V for JFET and $h_{ie}$ = 1k$\Omega$, $h_{fe}$ = 100, $V_{BE}$ = 0.6V for BJT.
Q5
a)
Design an RC phase shift Oscillator to generate 5kHz sine wave with 20V peak to peak amplitude. Assume $h_{fe}$ = 150 and $h_{ie}$ 1k$\Omega$.
(10 marks)
00
b)
Draw circuit diagram of Class B push pull power amplifier and explains its working. Find its maximum efficiency and maximum power dissipation in each transistor. What is cross-over distortion? How it can be overcome?
(5 marks)
00
Q6
a)
Determine $I_{DQ}$ and $V_{DSQ}$ for the given network of Enhancement type MOSFET arangement
(5 marks)
00
Given: $I_D$(ON) = 3mA, $V_{GS}$(ON) = 10V, V_{GS}(Th) = 5V.
b)
In Colpittus Oscillator, $C_1$ = 0.2$\mu$F, $C_2$ = 0.02$\mu$F. if the frequency of oscillator is 10 kHz, find the value of indicator. Also, find the required gain for oscillation.
(5 marks)
00
c)
Write a short note on: Cascode Amplifier.
(10 marks)
00
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