written 5.1 years ago by
yashbeer
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Electronics Engineering (Semester 4)
Total marks: 80
Total time: 3 Hours
INSTRUCTIONS
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.
1.Attempt any four of the following:
1.a.
Explain high frequency equivalent circuit of BJT.
(5 marks)
00
1.b.
Explain Barkhausen criteria
(5 marks)
00
1.c.
Draw MOSFET differential amplifier with active load.
(5 marks)
00
1.d.
Calculate max. power dissipation with and without heat sink.
$\theta$ $ J_C$ = $1.75^o$ C/W , $\theta$ cs = $1^o$ C/W , $\theta_C$A = $50^o$ C/W
$\theta$ SA = $5^o$ C/W , $T_j max$ = $150^o$ C and TAmb = $30^o$ C
(5 marks)
00
1.e.
Explain PNPN diode.
(5 marks)
00
2.a.
Explain class B push pull amplifier and cross over distortion also derive expression for efficiency.
(10 marks)
00
2.b.
Explain small signal analysis for MOSFET active load circuit.
(10 marks)
00
3.a.
Calculate lower cut off frequency for given circuit.
$β $ = 80 , $r_π$ = 1.3 K Ω ,$ g_{m2}$ = 50 μ A/V , $C_π$ = 15pF , $C_μ$ = 1pF
(10 marks)
00
3.b.
Explain working of SCR with V-I characteristics and its applications.
(10 marks)
00
4.a
Explain Hartley oscillator. Design the same for 50KHz
(10 marks)
00
4.b.
Find $ I_Q$ for given circuit.
$K_{n1}$ = $K_{n2}$=0.1 mA/V2 , $K_{n3}$=$K_{n4}$=0.3mA/V2 , $V_{TN}$= 1 V,
$\lambda$ = 0 for M1 , M2 , M3 and $\lambda$= 0.01/V for M4
(10 marks)
00
5.a.
Calculate bandwidth for two stage RC coupled CE amplifier.
$\beta_1$ = 100, $\beta_2$ = 150 , $r_{π1}$ = $r_{π2}$ = 1.3 KΩ , $g_{m1}$ = $g_{m2}$ = 50mA/V
$C _{π1}$ = $C_{π2}$ = 15 pF, $C_{μ1}$ = $C_{μ 2}$ = 1 pF
(10 marks)
00
5.b.
Explain feedback topologies with the help of neat block diagram.
(10 marks)
00
6. Write short notes on: [ANY THREE]
6.a.
Cascode MOSFET amplifier
(7 marks)
00
6.b.
UJT relaxation oscillator
(7 marks)
00
6.c.
Darlington configuration
(7 marks)
00
6.d.
Power BJTs
(6 marks)
00