Electronics Engineering (Semester 3)
Total marks: 80
Total time: 3 Hours
INSTRUCTIONS
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.
Solve any four
1.a.
What is DC load line of a diode, draw DC load line for the given circuit.
(5 marks)
00
1.b.
Draw output characteristics of BJT in CE configuration and state the importance of Active region.
(5 marks)
00
1.c.
Justify how current flows on E Mosfet even in absence of channel inside.
(5 marks)
00
1.d.
How solar cell generates electricity, explain with the help of its structure.
(5 marks)
00
1.e.
What is the Voltage Regulator explain simple zener shunt voltage Regulator.
(5 marks)
00
2.a.
Define the following related with diode:
Cut in voltage
Forward characteristics
Reverse characteristics
Diffusion capacitance
Temperature effects
(10 marks)
00
2.b.
For the given BJT circuit find Voltage Gain, Current gain, Input Resistance and Output resistance.
(10 marks)
00
3.a.
For the given E Mosfet circuit Determine Idq and VDSq
(10 marks)
00
3.b.
Explain working and VI characteristics of Tunnel Diode.
(10 marks)
00
4.a.
What is the use of Filter in Power supply? Draw circuit diagram of C-filter and explain its operation.
(10 marks)
00
4.b.
Determine ICq, VCEq, VC and VE for the BJT based given circuit
(10 marks)
00
5.a.
Design single stage CE amplifier for the following specifications Av $\geq$ 100, vo = 2.5 V, fL = 20Hz, Stability factor S= 10, use transistor BC 147 A
(15 marks)
00
5.b.
Draw Energy band diagram of diode under zero bias and under Forward bias.
(5 marks)
00
6.a.
For the given MOSFET amplifier circuit, find Av, Ri and Ro
(10 marks)
00
6.b.
Compare CB, CE and CC amplifiers.
(10 marks)
00