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Compare Power BJT, Power MOSFET and IGBT
written 4.9 years ago by
teamques10
★ 64k
|
modified 2.2 years ago
by
pedsangini276
• 4.7k
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written 4.9 years ago by
teamques10
★ 64k
|
| Sr no | Device Characteristic | Power BJT | Power MOSFET | IGBT |
|---|---|---|---|---|
| 1 | Voltage Rating | High $\lt1$ kv | High $\lt1$ kv | Very High $\gt 1$ kv |
| 2 | On state losses | Less | More than power BJT | Least |
| 3 | Device control | Current controlled | Voltage controlled | Voltage controlled |
| 4 | Input impedance | Low | High | High |
| 5 | Second break down | occurs | No Second break down | No Second break down |
| 6 | Switching speed | Slow ($\mu s$) | Fast ($\mu s$) | Medium |
| 7 | Cost | Low | High | High |
| 8 | Current Rating | High & $\lt 500A$ | Low & $\lt 200A$ | High & $\gt 500A$ |
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