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Compare EPROM and FLASH memories
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written 3.0 years ago by
teamques10
★ 65k
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| Parameter | Flash Memory | EPROM |
|---|---|---|
| Technique used for easing | Fowler-Nordheim tunnelling is used | Exposure to ultraviolet light |
| Time required for erasing | Instantaneously erased | Relatively long (10 to 15 minutes) |
| Programming | Takes place block by block | Selective programming of only 0s |
| Need to remove PROM from circuit | Not necessary | Necessary to remove … |
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