Question Paper: Engineering Physics 2 : Question Paper May 2013 - First Year Engineering (Semester 2) | Anna University (AU)
0

Engineering Physics 2 - May 2013

First Year Engineering (Semester 2)

TOTAL MARKS:
TOTAL TIME: HOURS

1 Copper has electrical conductivity at 300 K as 6.40?107 mho m-1. Calculate the thermal conductivity of copper.(2 marks) 10 Mention the properties of carbon nano tubes.(2 marks)


Answer any one question from Q11 (a) & Q11 (b)

11 (a) Define electrical conductivity. Obtain an expression for electrical conductivity by free electron theory.(16 marks) 11 (b) Based on Fermi-Dirac statistics, state the nature of Fermi distribution function. How it vary with temperature?(16 marks)


Answer any one question from Q12 (a) & Q12 (b)

12 (a) Explain the terms conduction band and valence band of an intrinsic semiconductor with a diagram. Derive an expression for density of electrons in conduction band.(16 marks) 12 (b) What is Hall effects? Derive an expression for Hall coefficient. Describe an experiment for the measurement of the Hall coefficient and mention its application.(16 marks)


Answer any one question from Q13 (a) & Q13 (b)

13 (a) Explain domain theory of ferromagnetism.(16 marks) 13 (b) Mention the difference between soft and hard superconductors. Decribe principle and working of SQUID and Crytron.(16 marks)


Answer any one question from Q14 (a) & Q14 (b)

14 (a) Define Electric and Ionic polarisation and explain them with a neat diagram.(16 marks) 14 (b) Define dielectric breakdown. Explain five types of dielectric breakdown occur in dielectric materials.(16 marks)


Answer any one question from Q15 (a) & Q15 (b)

15 (a) Explain the characteristics of Shape Memory Alloy and mention its advantages and disadvantages.(16 marks) 15 (b) (i) Describe plasma arcing techniques with a diagram to fabricate nano particles.(8 marks) 15 (b) (ii) Explain how are carbon nano particles fabricated using Laser deposition method.(8 marks) 2 Define density of states. What is its use?(2 marks) 3 Compared with Germanium, Silicon is widely used to manufacture the elemental device. Why?(2 marks) 4 Draw the graph for variation of Fermi level with temperature in p-type semiconductor.(2 marks) 5 The magnetic field strength of Silicon is 1500 Am-1. If the magnetic susceptibility is -(0.3?10-5). Calculate the magnetisation and flux density is silicon.(2 marks) 6 What is meant by persistent current?(2 marks) 7 What are the factors involved in dielectric loss in a dielectric material?(2 marks) 8 An atom has a polaraisibility of 10-40 Fm2. It finds itself at a distance of 1.0 nm from a proton. Calculate the dipole moment include in the atom. (?0=8.85?10-12).(2 marks) 9 Sketch the two phases which occur in shape memory alloy.(2 marks)

ADD COMMENTlink
modified 11 months ago by gravatar for lokeshbittu1234 lokeshbittu12340 written 2.9 years ago by gravatar for Team Ques10 Team Ques10 ♦♦ 400
Please log in to add an answer.