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Prove that the Fermi level lies exactly at the centre of the forbidden energy gap in case of an intrinsic semiconductor. OR Derive an expression for Fermi level for an intrinsic semiconductor.
written 7.8 years ago by gravatar for teamques10 teamques10 ★ 65k modified 16 months ago by gravatar for sagarkolekar sagarkolekar ★ 11k
engineering physics
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written 7.8 years ago by gravatar for teamques10 teamques10 ★ 65k •   modified 7.8 years ago

Let,

$n_e$ be the number of electrons in the semiconductor band.

$n_v$ be the number of holes in the valence band.

At any temperature, T>0K

$n_e = N_c.e^{-(E_c - E_F)/kT}$ and

$n_v = N_v.e^{-(E_F-E_c)/kT}$

Where, $N_c$ is the effective density of states in the conduction band.

$N_v$ is the effective …

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