written 5.6 years ago by | • modified 4.5 years ago |
Subject: Logic Design
Topic: Biasing of BJT
Difficulty: Medium
written 5.6 years ago by | • modified 4.5 years ago |
Subject: Logic Design
Topic: Biasing of BJT
Difficulty: Medium
written 5.6 years ago by |
Comparison of characteristics of Schottky diode and PN junction diode
CHARACTERISTIC | SCHOTTKY DIODE | PN JUNCTION DIODE |
---|---|---|
Forward current mechanism | Majority carrier transport. | Due to diffusion currents, i.e. minority carrier transport. |
Reverse current | Results from majority carriers that overcome the barrier. This is less temperature dependent than for standard PN junction. | Results from the minority carriers diffusing through the depletion layer. It has a strong temperature dependence. |
Turn on voltage | Small - around 0.2 V. | Comparatively large - around 0.7 V. |
Switching speed | Fast - as a result of the use of majority carriers because no recombination is required. | Limited by the recombination time of the injected minority carriers. |
Schottky diode definition
A Schottky diode is a metal-semiconductor junction diode that has less forward voltage drop than the P-N junction diode and can be used in high-speed switching applications.
Symbol of Schottky diode
The symbol of a Schottky diode is shown in the below figure. In a Schottky diode, the metal acts as the anode and n-type semiconductor act as the cathode.
PN Junction Diode
A P-N junction diode is a piece of silicon that has two terminals. One of the terminals is doped with P-type material and the other with N-type material. The P-N junction is the basic element for semiconductor diodes. A Semiconductor diode facilitates the flow of electrons completely in one direction only – which is the main function of a semiconductor diode. It can also be used as a Rectifier.