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Compare BJT with JFET
written 5.5 years ago by | • modified 4.5 years ago |
Subject: Logic Design
Topic: Biasing of BJT
Difficulty: Medium
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written 5.5 years ago by | • modified 4.5 years ago |
Subject: Logic Design
Topic: Biasing of BJT
Difficulty: Medium
written 5.5 years ago by | • modified 5.5 years ago |
No. | JFET | BJT |
---|---|---|
1. | Unipolar device (current conduction is only due to one type of majority carrier either electron or hole | Bipolar device (current condition, by both types of carriers, i.e. majority and minority-electrons and holes) |
2. | The operation depends on the control of a junction depletion width under reverse bias. | The operation depends on the injection of minority carriers across a forward biased junction. |
3. | Voltage driven device. The current through the two terminals is controlled by a voltage at the third terminal (gate). | Current driven device. The current through the two terminals is controlled by a current at the third terminal (base). |
4. | Low noise level | High noise level. |
5. | High input impedence (due to reverse bias) | Low input impedance (due to forward bias). |
6. | Gain is characterised by transconductance. | Gain is characterized by voltage gain. |
7. | Better thermal stability. | Less thermal stability. |