IC Technology Question Paper - May 18 - Electronics Engineering (Semester 7) - Mumbai University (MU)

IC Technology - May 18

Electronics Engineering (Semester 7)

Total marks: 80
Total time: 3 Hours
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.

Q1) Solve any four of the following

1(a) Enlist the steps for obtaining Silicon from Sand
(5 marks) 2238

1(b) Explain the difference between Dry oxidation and Wet oxidation.
(5 marks) 2504

1(c) Enlist important parameters for which measurement is required before device processing begin.
(5 marks) 2837

1(d) Explain difference between FD SOI and PD SOI
(5 marks) 2855

1(e) Compare evaporation and sputtering methods for metal deposition
(5 marks) 2253

2(a) With a neat diagram, explain the Float Zone technique of crystal growth
(10 marks) 2245

2(b) What do you mean by Class of clean room? Give the steps in standard RCA cycle during wafer cleaning
(10 marks) 2236 2237

3(a) Explain the difference Between Contact, Proximity and Projection Printing
(10 marks) 2817

3(b) Develop the equations to describe the oxidation process (Deal-Grove Model)
(10 marks) 2505

4(a) Explain need of isolation in VLSI .Explain one method to accomplish it
(10 marks) 2820

4(b) Draw Layout of CMOS Inverter along with its circuit diagram. Mention Clearly all dimension as per lambda rules. Explain buried and butting contact.
(10 marks) 2834 2835

5(a) Describe with the help of a neat diagram Hayness-Schokly experiment for measurement of Drift Mobility of n-type semiconductor.
(10 marks) 2839

5(b) Explain the fabrication Process steps along with vertical cross-sectional view for CMOS Inverter using N-well Process
(10 marks) 2827

Q6) Write short notes on (any four):

6(a) Fabrication of MESFET
(5 marks) 2858

6(b) Silicon Crystal defects
(5 marks) 2242

(5 marks) 00

6(d) Multigate device structures
(5 marks) 2868

6(e) Types of Thin Film Deposition
(5 marks) 2247


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