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Electronics Engineering (Semester 7)
Total marks: 80
Total time: 3 Hours
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.
Q1) Solve any four of the following
Enlist the steps for obtaining Silicon from Sand
Explain the difference between Dry oxidation and Wet oxidation.
Enlist important parameters for which measurement is required before
device processing begin.
Explain difference between FD SOI and PD SOI
Compare evaporation and sputtering methods for metal deposition
With a neat diagram, explain the Float Zone technique of crystal growth
What do you mean by Class of clean room? Give the steps in standard RCA cycle during wafer cleaning
Explain the difference Between Contact, Proximity and Projection Printing
Develop the equations to describe the oxidation process (Deal-Grove Model)
Explain need of isolation in VLSI .Explain one method to accomplish it
Draw Layout of CMOS Inverter along with its circuit diagram. Mention Clearly all dimension as per lambda rules. Explain buried
and butting contact.
Describe with the help of a neat diagram Hayness-Schokly experiment for measurement of Drift Mobility of n-type semiconductor.
Explain the fabrication Process steps along with vertical cross-sectional
view for CMOS Inverter using N-well Process
Q6) Write short notes on (any four):
Fabrication of MESFET
Silicon Crystal defects
Multigate device structures
Types of Thin Film Deposition