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A GaAs FET has following scattering and noise parameters at $4 \mathrm{GH}_2$ measured with $50 \Omega \begin{aligned} &S_{11}=0.6 \angle-60^{\circ} \\ &s_{12}=0.05 \angle-26^{\circ} \end{aligned} $
rf design updated 3.7 years ago by thambisrilalith126 • 20
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A one port oscillator uses a negative resistance diode having $\Gamma_{in}=1.25 \angle 40^{\circ}, \pi_0=50 \Omega$ at its desired operating point for $f=6 \mathrm{GHz}$. Design Load matching network.
rf design updated 3.7 years ago by thambisrilalith126 • 20
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An $N=3$ Chebyshev bandpass filter is to be designed with $3 d B$ passband ripple for a communication link. The center frequency is at $2.4 \mathrm{GHz}$ and filter has to meet bandwidth......
rf design updated 3.7 years ago by thambisrilalith126 • 20
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