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Compare wet etching and Dry etching
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| written 9.4 years ago by | modified 6.7 years ago by |
| Parameters | Dry Etching | Wet etching |
|---|---|---|
| Directionality | Good for most materials | Only with crystal materials [Aspect ratio upto 100] |
| Production automation | Good | Poor |
| Environmental impact | Low | High |
| Masking film adherence | Not as critical | Very critical |
| Selectivity | Poor | Very Good |
| Materials to be etched | Only certain materials | All |
| Process scale-up | Difficult | Easy |
| Cleanliness | Conditionally clean | Good to very good |
| Equipment cost | Expensive | Less expensive |
| Operational parameters | Many | Few |
| Typical etch rate | Slow [$0.1 \mu m/min$] to fast [$6 \mu m/min$] | Fast [$1 \mu m/min \ and \ up$] |
| Control of etch rate | Good in case of slow etch | Difficult |
| Application:For making very small features in thin films | Possible to etch almost straight down without under cutting | Undercutting problem will occur |