Explain Recent Development

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Explain Recent Development

written 9.5 years ago by

manish090801 • 0

modified 9.5 years ago by

arnavyadav0002 • 0

Mumbai University > Electronics Engineering > Sem 8 > MEMS Technology

Marks: 5M

mems technology

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written 9.5 years ago by

manish090801 • 0

Recent developments have substantially improved the performance of DRIE with better sidewall protecting matrials.
Silicon substracts with A/P over 100 was with θ = ±20 at a depth of up to 300 µm was achieved. The etching rate, however was reduced to 2-3 µm/min.

Popular sidewall protecting materials:

Sidewall protection materials	Selectivity ratio	Aspect ratio A/P
Polymer		30:1
Photoresists	50:1	100:1
Silicon dioxide	120:1	200:1

Wet Vs. Dry Etching

Parameters	Dry etching	Wet etching
Directionality	Good for most materials	Only with single crystal materials (aspect ratio up to 100)
Production-automation	Good	Poor
Environmental impact	Low	High
Masking film adherence	Not as critical	Very critical
Selectivity	Poor	Very good
Materials to be etched	Only certain materials	All
Process scale up	Difficult	Easy
Cleanliness	Conditionally clean	Good to very good
Critical dimensional control	Very good (< 0.1µm)	Poor
Equipment cost	Expensive	Less expensive
Typical etch rate	Slow (0.1 µm/min) to fast (6µm/min)	Fast (1µm/min and up)
Operational parameters	Many	Few
Control of each rate	Good in case of slow etch	Difficult

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