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Explain Surface Micromachining
written 8.2 years ago by | modified 8.2 years ago by |
Mumbai University > Electronics Engineering > Sem 8 > MEMS Technology
Marks: 5M
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written 8.2 years ago by | modified 8.2 years ago by |
Mumbai University > Electronics Engineering > Sem 8 > MEMS Technology
Marks: 5M
written 8.2 years ago by |
General description of process
Illustration of micromachining process – creation of a polysilliconcanfillever beam on silicon substrate base:
Etching Process : 1:1 HF:H2O+1:1HCl:H2O. Rising with deionized water and dried under infrared lamp.
Etching rates for sacrificial layers
Thin Oxide Films | Lateral Etch rate (µm/min) |
---|---|
CVD SiO2 (densifiedat 10500C for 30 min) | 0.6170 |
Ion-implanted SiO2 (at 8 x 10115/cm2, 50 KeV) | 0.8330 |
Phosphosilicate (PSG) | 1.1330 |
5%-5% Boromphosphosilicate (BPSG) | 4.1670 |
Mechanical problems
1) Quality of adhesion of layers:
2) Interfacial stresses due to mismatch of CTE:
3) Stiction: