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Compare BJT, JFET and MOSFET
written 6.3 years ago by | modified 2.2 years ago by |
Mumbai University > Electronics Engineering > Sem 4 > Discrete Electronic Circuits
Marks: 5M
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written 6.3 years ago by | modified 2.2 years ago by |
Mumbai University > Electronics Engineering > Sem 4 > Discrete Electronic Circuits
Marks: 5M
written 6.3 years ago by | • modified 6.3 years ago |
Parameters | Bipolar Junction Transistor (BJT) | Junction Field Effect Transistor (JFET) | Metal Oxide Semiconductor Field Effect Transistor (MOSFET) |
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Symbol | |||
Definition | BJT is known as Biploar Junction Device because it uses both electrons and holes for conduction. | JFET is known as unipolar device because current is due to one charge carriers i.e. electrons or holes. | MOSFET is known as unipolar device because current is due to one charge carriers depending on type of MOS. |
Input Resistance | BJT offers low input resistance. | JFET offers large input resistance order of $1M\Omega$ to $5M\Omega$. | MOSFET offers very large input resistance. |
Biasing used | Fixed bias, Collector base bias, Voltage divider biasing. | Self bias& Voltage divider biasing. | In DMOSFET we use self bias and voltage divider biasing, in EMOSFET we use feedback bias and voltage divider biasing. |
Operating Region | Active, Saturation & Cut off region. | Ohmic & Pinch off region | Linear & Saturation region |
Thermal Runaway | Thermal runaway occurs at high temperature. | No thermal runaway. | No thermal runaway. |
Type of device | Current controlled device. | Voltage controlled device. | Voltage controlled device |
Terminals | Base, Emitter & Collector. | Gate, Drain & Source. | Gate, Drain, Source . |
Input current | Input current is order of mA (milli ampere). | Gate current is order of nA (nano ampere). | Gate current is order of pA (pico ampere). |
Applications | Low Current application. | Low voltage application. | Since power consumption is less used in CMOS circuits |