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Compare BJT, JFET and MOSFET

Mumbai University > Electronics Engineering > Sem 4 > Discrete Electronic Circuits

Marks: 5M

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Parameters Bipolar Junction Transistor (BJT) Junction Field Effect Transistor (JFET) Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
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Definition BJT is known as Biploar Junction Device because it uses both electrons and holes for conduction. JFET is known as unipolar device because current is due to one charge carriers i.e. electrons or holes. MOSFET is known as unipolar device because current is due to one charge carriers depending on type of MOS.
Input Resistance BJT offers low input resistance. JFET offers large input resistance order of $1M\Omega$ to $5M\Omega$. MOSFET offers very large input resistance.
Biasing used Fixed bias, Collector base bias, Voltage divider biasing. Self bias& Voltage divider biasing. In DMOSFET we use self bias and voltage divider biasing, in EMOSFET we use feedback bias and voltage divider biasing.
Operating Region Active, Saturation & Cut off region. Ohmic & Pinch off region Linear & Saturation region
Thermal Runaway Thermal runaway occurs at high temperature. No thermal runaway. No thermal runaway.
Type of device Current controlled device. Voltage controlled device. Voltage controlled device
Terminals Base, Emitter & Collector. Gate, Drain & Source. Gate, Drain, Source .
Input current Input current is order of mA (milli ampere). Gate current is order of nA (nano ampere). Gate current is order of pA (pico ampere).
Applications Low Current application. Low voltage application. Since power consumption is less used in CMOS circuits
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