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Compare Depletion and Enhancement type MOSFET

written 6.9 years ago by teamques10 ★ 68k

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electronic devices and circuits

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written 6.8 years ago by teamques10 ★ 68k

Sr.No	D-MOSFET	E-MOSFET
1	An insulating oxide layer (Sio2) is present between gate and channel	The insulating oxide layer is present between gate and substrate
2	N or p type channel is present	Channel is not present. At the time of operation, an induced channel gets created.
3	For an n-channel D-MOSFET the Vgs is negative for depletion mode and positive for enhancement mode.	For an n-channel E-MOSFET,Vgs will be only positive.
4	For an n-channel D-MOSFET,Id decreases as Vgs becomes more and more negative	For an n-channel E-MOSFET,Id increases as Vgs becomes more and more positive
5	For an n-channel D-MOSFET,Id=0 for Vgs ≥ Vp	For an n-channel E-MOSFET,Id=0 for Vgs ≤ Vt

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