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Differentiate between symmetrical IGBT and asymmetrical IGBT
written 6.2 years ago by
sndeshpande.pvpp
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modified 24 months ago
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Krishna_Agrawal
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written 24 months ago by
Krishna_Agrawal
• 2.6k
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| Symmetrical IGBT | Asymmetrical IGBT |
|---|---|
| It is also called as nonpunch through IGBT | It is also called as punch through IGBT |
| More rugged in short circuit failure mode. | Less rugged in short circuit failure mode. |
| More thermally stable. | Less thermally stable. |
| The IGBT have slower turn off | The IGBT have faster turn off |
| Collector is lightly doped (P layer only). | Collector is heavily doped (P+ layer). |
| The temperature coefficient of ON - state voltage is strongly positive. | Small positive temperature coefficient of ON - state voltage. |
| So in this type of IGBT, the parallel operation is easy. | Parallel operation requires greater care and attention. |
| These type of IGBTs are useful for AC circuits. | These types of IGBTs are useful for DC circuits. |
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