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Differentiate between SCR and IGBT.
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| written 3.6 years ago by |
| BASIS FOR COMPARISON | SCR | IGBT |
|---|---|---|
| Basic | Three terminal devices :- Anode, Cathode, Gate | Three terminal device :- Collector, Emitter, Gate. It is advantage combination of BJT and MOSFET. |
| Definition | SCR stands for Silicon Controlled Rectifier. | IGBT stands for Insulated Gate Bipolar Transistor. |
| Current Conduction Capability | Yes, Uni-Directional current Device | Yes, Uni-Directional current Device |
| Voltage Withstand Ability | Yes, but Bipolar voltage withstanding device. | Yes, Unipolar voltage withstanding device acquired from BJT and MOSFET. |
| Turn ON and Turn OFF | Applying signal at gate terminalbut can’t be turned off using same gate signal. | Both ON and OFF can be possible using gate signals. |
| Controllable Nature | Partially controllable. | Fully controllable. |
| Gate Signal Requirement | Pulse voltage is applied as control signal to turn ON then, no need of gate pulse. | Continuous gate signal is required to control the device. |
| Switching Loss | High loss because of low switching frequency. | Low switching loss than SCR but high switching loss than MOSFET. |
| Conduction Loss | Low Conduction Loss | Low Conduction Loss |
| Switching Speed | Low | Medium |