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Fabrication of PMOS transistors
written 7.4 years ago by gravatar for vedantchikhale vedantchikhale • 900 modified 6.4 years ago by gravatar for ankitpandey ankitpandey • 100
microelectronics
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written 7.3 years ago by gravatar for vedantchikhale vedantchikhale • 900 •   modified 6.4 years ago

Fabrication of NMOS transistor:-

Diffusion Mask -

The first modification of the device wafers was the application of an oxide layer to serve as a diffusion mask. The target thickness of this mask was 8000 Angstroms and the goal was to make it as uniform and contain as little impurities …

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