Compare Schottky barrier diode and PN junction diode

Subject: Logic Design

Topic: Biasing of BJT

Difficulty: Medium


Comparison of characteristics of Schottky diode and PN junction diode

Forward current mechanism Majority carrier transport. Due to diffusion currents, i.e. minority carrier transport.
Reverse current Results from majority carriers that overcome the barrier. This is less temperature dependent than for standard PN junction. Results from the minority carriers diffusing through the depletion layer. It has a strong temperature dependence.
Turn on voltage Small - around 0.2 V. Comparatively large - around 0.7 V.
Switching speed Fast - as a result of the use of majority carriers because no recombination is required. Limited by the recombination time of the injected minority carriers.

Schottky diode definition

A Schottky diode is a metal-semiconductor junction diode that has less forward voltage drop than the P-N junction diode and can be used in high-speed switching applications.

Symbol of Schottky diode

The symbol of a Schottky diode is shown in the below figure. In a Schottky diode, the metal acts as the anode and n-type semiconductor act as the cathode.


PN Junction Diode

A P-N junction diode is a piece of silicon that has two terminals. One of the terminals is doped with P-type material and the other with N-type material. The P-N junction is the basic element for semiconductor diodes. A Semiconductor diode facilitates the flow of electrons completely in one direction only – which is the main function of a semiconductor diode. It can also be used as a Rectifier.


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