Comparison of characteristics of Schottky diode and PN junction diode
|CHARACTERISTIC||SCHOTTKY DIODE||PN JUNCTION DIODE|
|Forward current mechanism||Majority carrier transport.||Due to diffusion currents, i.e. minority carrier transport.|
|Reverse current||Results from majority carriers that overcome the barrier. This is less temperature dependent than for standard PN junction.||Results from the minority carriers diffusing through the depletion layer. It has a strong temperature dependence.|
|Turn on voltage||Small - around 0.2 V.||Comparatively large - around 0.7 V.|
|Switching speed||Fast - as a result of the use of majority carriers because no recombination is required.||Limited by the recombination time of the injected minority carriers.|
Schottky diode definition
A Schottky diode is a metal-semiconductor junction diode that has less forward voltage drop than the P-N junction diode and can be used in high-speed switching applications.
Symbol of Schottky diode
The symbol of a Schottky diode is shown in the below figure. In a Schottky diode, the metal acts as the anode and n-type semiconductor act as the cathode.
PN Junction Diode
A P-N junction diode is a piece of silicon that has two terminals. One of the terminals is doped with P-type material and the other with N-type material. The P-N junction is the basic element for semiconductor diodes. A Semiconductor diode facilitates the flow of electrons completely in one direction only – which is the main function of a semiconductor diode. It can also be used as a Rectifier.