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Compare BJT with JFET

written 7.9 years ago by teamques10 ★ 70k

•   modified 6.8 years ago

Subject: Logic Design

Topic: Biasing of BJT

Difficulty: Medium

digital logic design

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written 7.9 years ago by teamques10 ★ 70k

•   modified 7.8 years ago

No.	JFET	BJT
1.	Unipolar device (current conduction is only due to one type of majority carrier either electron or hole	Bipolar device (current condition, by both types of carriers, i.e. majority and minority-electrons and holes)
2.	The operation depends on the control of a junction depletion width under reverse bias.	The operation depends on the injection of minority carriers across a forward biased junction.
3.	Voltage driven device. The current through the two terminals is controlled by a voltage at the third terminal (gate).	Current driven device. The current through the two terminals is controlled by a current at the third terminal (base).
4.	Low noise level	High noise level.
5.	High input impedence (due to reverse bias)	Low input impedance (due to forward bias).
6.	Gain is characterised by transconductance.	Gain is characterized by voltage gain.
7.	Better thermal stability.	Less thermal stability.

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