0
835views
State the problems in diffusion.
1 Answer
1
0views
  1. Redistribution of simple impurities during oxide growth:

    During oxide growth some of the impurity doped silicon is consumed which results in redistribution of impurities. The extent of this redistribution is the function of the rate at which the silicon is consumed and of the relative diffusivities and solid solubility of …

Create a free account to keep reading this post.

and 2 others joined a min ago.

Please log in to add an answer.