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Explain LOCOS technique for isolation in VLSI.
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written 7.1 years ago by
teamques10
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LOCOS
Local Oxidation of Silicon (LOCOS) is the traditional isolation technique.
At first a very thin silicon oxide layer is grown on the wafer, the so-called pad oxide.
Then a layer of silicon nitride is deposited which is used as an oxide barrier.
The pattern transfer is performed by photolithography. …
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