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Design two stage operational amplifier that meet the following specifications with a phase margin of 60.

Assume the channel length is to be 1 $\mu m$

$Kn' = 100 \mu A/V^2$ $Kp' = 20 \mu A/V^2$ $V_{Tn} = \big|V_{TP} \big| = 0.5 V$
$\lambda_N = 0.06 V^{-1}$ $\lambda_P = 0.08 V^{-1}$ $A_v \gt 5000 V/V$
$V_{DD} = 2.5 V$ $V_{ss} = -2.5 V$ $GB = 5MHz$
$C_L = 10 pF$ $SR \gt 10 v/μsec$ $V_{out \ range} = +/- 2V$
$ICMR = -1 to 2 V$ $P_{diss} ≤ 2mW$
operational amplifiers • 1.3k  views
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• Assuming

• Circuit to be designed:

M3 and M4 are the diode connected loads. M8 is missing and can be added later for offset nulling.

• For good stability, |$P_1$| > |$P_2$|

• Further we can see that Z1 > 10 GBW

• From (1) and (2) we get,

$C_C$ ≥ 0.22 $C_2$

• This is the required condition for stability.

• The total load capacitance as given to us $C_L$ = $C_2$ = 10pF

$C_C$ ≥ 0.22 pF

Choose $C_C$ = 3 pF or 2.5 pF

• Given slew rate

• ICMR Evaluation:

• If the maximum VT variation due to body bias is assumed to be 0.15 V

• Taking Vin,max and Vin,min values

• Evaluation of (W/L)1 and (W/L)2

• Evaluation of (W/L) 5: ICMR is given is -1.25 to 2V

• Evaluation of (W/L) 6 From phase margin 8 zero place chosen by us (∅_n 8 Z1 ) We have obtained

• Differentiating above equation w. r. t. (1+λ.VGS6)

• This value of IDS6 is very high and will consume high power dissipation. (Typically IDS6 should be less than 100)

• However (W/L)6 can also be found through gm6 & gm4 relationship.
• M4 and M6 are mirror configuration almost.

• Evaluation of M7 Since M5 & M6 are current mirror configuration & using I6 = I7 we get,

• Since M5 & M9 – M12 are in mirror configuration and we can assume

• Verification of DC gain

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