Electronics And Telecomm (Semester 3)
Total marks: 80
Total time: 3 Hours
INSTRUCTIONS
(1) Question 1 is compulsory.
(2) Attempt any three from the remaining questions.
(3) Draw neat diagrams wherever necessary.
1.a.
Design 3-bit binary to gray code converter.
(6 marks)
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1.b.
Design MOD-6 synchronoues counter using Toggle FF (T FF).
(6 marks)
00
OR
2.a.
Design 3-bit parity generator for even parity bit.
(6 marks)
00
2.b.
Convert SR FF to JK FF.
(6 marks)
00
3.a.
Design a sequential circuit for the given state diagram using delay flip flop (D FF)

(6 marks)
00
3.b.
Draw and explain working of two input TTL NAND gate and list advantages of totem pole output stage.
(6 marks)
00
OR
4.a.
Design mealy type sequence detector to detect a serial input sequence of 1101 using Delay (D FF)
6 marks)
00
4.b.
Draw and explain two input CMOS NAND gate.
(6 marks)
00
5.a.
Implement the following functions using PLA:
$F1 = \Sigma m(0,2,5,7)$
$F1 = \Sigma m(2,3,4,5,)$
(6 marks)
00
5.b.
Compare PROM, PLA and PAL
(4 marks)
00
5.c.
Classify memories on the basis of principle of operation.
(3 marks)
00
OR
6.a.
Draw circuit of one-cell of static RAM and explain its working.
(6 marks)
00
6.b.
Draw and explain architecture of PLA.
(4 marks)
00
6.c.
Explain how will you expand memory capacity (word size).
(3 marks)
00
7.a.
Explain the following pins of 8051(any three):
i. PSEN(active low)
ii. EA(active low)
iii. ALE
iv. RST
(6 marks)
00
7.b.
Explain any four multi-functional pins of port-3 of 8051.
(4 marks)
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7.c.
List out features of 8051.
(3 marks)
00
OR
8.a.
Explain the following instructions with example (any three):
i. MOVX A,@DPTR
ii. ADDC A,B
iii. MUL AB
iv. RETI
(6 marks)
00
8.b.
Draw and explain block diagram of 8051 in detail.
(4 marks)
00
8.c.
Write a program for 8-bit multiplication of binary numbers.
(3 marks)
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