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The resistivity of intrinsic InSb at room temperature is 2 x 10-4? cm. if the mobility of electron is 6m2/V-Sec and mobility of hole is 0-2 m2/V-Sec. calculate its instrinsic carrier density.
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written 3.0 years ago by |
Given –
$\rho=2\times10^{-4} \Omega cm$
$\mu _e=6m^2/V-sec$
$\mu_h=0.2m^2/V-sec$
To find – $n_i$
Solution –
For intrinsic semiconductor,
$n_e=n_i-n_h$
we know that,
$\sigma =\dfrac {1}{\rho}$
$\sigma_{in}=\dfrac {1}{2\times 10^{-4}}$
$\sigma_{in}=50 ohm/cm$
We know that, for intrinsic semiconductor,
$\sigma_{in}=n_{i} \ e(\mu_{e}+\mu_{h})$
$n_{i}=\dfrac {\sigma_{in}}{e\cdot(\mu_{e}+\mu_{n})}$
$=\dfrac {50}{1.6\times 10^{-19}[6+0.2]}$
$=\dfrac {50}{1.6\times 10^{-19}[6.2]}$
$n_{i}=5.04 \times 10^{19}$
∴ …