Compare direct band gap and indirect band gap semiconductors.

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Sr. No	Direct Band gap semiconductor	Indirect band gap semiconductor
1	A direct band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band aligns with the minimum energy level of the conduction band with respect to momentum.	A indirect band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band are misaligned with the minimum energy level of the conduction band with respect to momentum.
2	In a DBG semiconductor, a direct recombination takes place with the release of the energy equal to the energy difference between the recombining particles.	Due to a relative difference in the momentum, first, the momentum is conserved by release of energy and only after both the momenta align themselves, a recombination occurs accompanied with the release of energy.
3	The efficiency factor of a DBG semiconductor is much more than that of an IBG semiconductor.	The probability of a radiative recombination, is much less in comparison to that in case of DBG semiconductors
4	The most thoroughly investigated and studied DBG semiconductor material is Gallium Arsenide (GaAs).	The two well-known intrinsic semiconductors, Silicon and Germanium are both IBG semiconductors.
5	DBG semiconductors are always preferred over IBG for making optical sources.	The IBG semiconductors cannot be used to manufacture optical sources.

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