Compare direct band gap and indirect band gap semiconductors.
|Sr. No||Direct Band gap semiconductor||Indirect band gap semiconductor|
|1||A direct band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band aligns with the minimum energy level of the conduction band with respect to momentum.||A indirect band-gap (DBG) semiconductor is one in which the maximum energy level of the valence band are misaligned with the minimum energy level of the conduction band with respect to momentum.|
|2||In a DBG semiconductor, a direct recombination takes place with the release of the energy equal to the energy difference between the recombining particles.||Due to a relative difference in the momentum, first, the momentum is conserved by release of energy and only after both the momenta align themselves, a recombination occurs accompanied with the release of energy.|
|3||The efficiency factor of a DBG semiconductor is much more than that of an IBG semiconductor.||The probability of a radiative recombination, is much less in comparison to that in case of DBG semiconductors|
|4||The most thoroughly investigated and studied DBG semiconductor material is Gallium Arsenide (GaAs).||The two well-known intrinsic semiconductors, Silicon and Germanium are both IBG semiconductors.|
|5||DBG semiconductors are always preferred over IBG for making optical sources.||The IBG semiconductors cannot be used to manufacture optical sources.|