VGS=3V

VTN=1V

Kn=0.8mA/V2

$\lambda=0.018V^{-1}$

For proper operation of Enchancement type MOS VGS should be +ve and greater than VTN the data VGS > VTN . So device is operating in saturation region.

$g_m=K(V_{GS}-V_{th}) =0.8(3-1)=0.8 \times 2=1.6k\mho$

ID = k(VGS-Vth)2 = 0.8 x 4=3.2mA

VDS=6-3.2 x 2.7

=-2.64

$\therefore \dfrac{V_{DS}}{I_P}=\dfrac{2.64}{3.2}=0.8\\ r_0=rds//R_C\\ \dfrac{0.8\times2.7}{3.5}=0.63\\ A_v=-gmRi\\ =-1.6\times2.7=-4.32$