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Enlist steps for fabrication of CMOS inverter using the N well process. Draw a vertical cross-sectional view starting from the substrate to the gate, source, and drain formation in the fabrication of

Enlist steps for fabrication of CMOS inverter using the N well process. Draw a vertical cross-sectional view starting from the substrate to the gate, source, and drain formation in the fabrication of the CMOS inverter.

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Solution:

cos inverter using the N-well process.

Step-1: n-well fabrication:

  1. P-type substrate.

  2. Grow $\mathrm{SiO}_2$

  3. Apply photoresist

  4. Use $N$-well mask Etch photoresist in window 5. Etch oxide. Use photo resists as a mask. Window formed in $\operatorname{SiO}_2$ 6. Etch photoresist. on the wafer 6. Etch photoresist. on the wafer. 7. Implant $N$-well.

  5. Exh oxide.

Step 2: Deposit polysilicon and Gate formation.

  1. Grow thin oxide and deposit poly.

  2. Use Gate mask Exch Poly and thin oxide.

  3. Grow thick oxide.

Step 3: Carry out n-diffusion bor nos and well contact

  1. Etch oxide for n-mos and n-well contact n-diffusion:

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  1. n+ dibasic/implant.

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  1. Etch oxide.

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Step 4: P Diffusion for Pmos and contact for the substrate.

  1. P Diffusion-Grow thick oxide, Etch oxide, P-diffusion.

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