Solution:

If a semiconductor material carrying a current is placed in a magnetic field that is in a Lar direction then an electric field is developed in a direction 1 ar to current- and magnetic field.

Electric field $\varepsilon_y$ is developed between two faces that oppose the motion of electrons toward the front face. Hall voltage $U_H$ can be measured between two faces with front face Helaine w.r.t. back face. For holes, the VI Y sign is reversed.

The resistivity of semi-hall effect measurements is used to determine the majority carrier type, concentration \& mobility in a semiconductor.

$$\mu_H=\frac{l}{\omega} \frac{V H}{V_x B}$$