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The PNP transistor shown in Fig has $\beta$ = 50. Find the value of $R_C$ to obtain $V_C$ = +5V. What happens if transistor is replaced with another transistor having $\beta$ = 100.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Transducers - 1 : Question Paper May 2015 - Instrumentation Engg. (Semester 3) | Mumbai University (MU)
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Transducers - 1 : Question Paper Dec 2015 - Instrumentation Engg. (Semester 3) | Mumbai University (MU)
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Write short note on: AC and DC load line
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Write short note on: DC load line & significance of Q point
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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For a NPN transistor in CE mode voltage divider bias configuration determine $V_C$ and $V_s$.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Define Stability factor. Derive the equation for Stability factor. State which biasing technique is more stable? Justify your answer.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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For the circuit shown below, calculate $I_DQ$ & $I_DSQ$. It is given that $I_D (ON)$ = 6mA, $V_GS (ON)$ = 8V, $V_t$h = 3V.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Write short notes on: Transistor as a switch
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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20k
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Determine Q Point and draw d.c load line for the amplifier shown
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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86k
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Draw Input and Output characteristics of BJT in common emitter configuration.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Explain the concept of thermal runaway in BJT
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Find $V_E$ and $I_E$ for the circuit given below
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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What are the different biasing techniques used to bias D-MOSFET and E-MOSFET? Explain with the help of appropriate circuit diagrams.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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In n-channel E-MOSFET
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Design JFET circuit with voltage divider biasing as shown in fig.2b with JFET parameters $I_DSS$ = 12mA,$V_P$ = -3.5V and $\lambda$ = 0. Let $R_1+ R_2$= 100k, $I_DSQ$ = 5mA and $V_DSQ$ = 5V
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Explain working of n-channel EMOSFET with the help output characteristic, showing clearly effect of channel length modulation.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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1.2k
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For the circuit shown in fig. Find $I_DS$ and $V_DS$ if $V_RS$ = 1.5V
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Explain the basic operation and characteristics of n-channel enhancement type MOSFET.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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12k
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Compare Depletion and Enhancement type MOSFET.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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7.3k
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Write short notes on: Biasing of JFET for Zero temperature drift
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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19k
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Transistor is a current controlled device while FET is a voltage controlled device. Justify
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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23k
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Explain construction and characteristics of n channel Enhancement MOSFET. Draw transfer characteristics and drain characteristics.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Explain effect of temperature on JFET and derive equation for zero current drift.
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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Explain the working and characteristics of n-channel Junction Field Effect Transistors (JFET).
analog electronics updated 9.5 years ago by teamques10 ★ 70k
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